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| SHINDENGEN Schottky Rectifiers (SBD) Dual S60HC3 30V 60A OUTLINE DIMENSIONS Case : MTO - 3P Unit : mm RATINGS Absolute Maximum Ratings i Tc=25, unless otherwise specified j Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=104 IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Peak Surge Forward Current TOR (Recommended torqueF 0.5Nm) Mounting Torque Electrical Characteristics i Tc=25, unless otherwise specified j Symbol Conditions Item VF Forward Voltage IF=30A, Pulse measurement, Rating of per diode IR Reverse Current VR=30V, Pulse measurement, Rating of per diode Cj Junction Capacitance f=1MHz, VR=10V, Rating of per diode Thermal Resistance junction to case AEjc Ratings -55125 125 30 60 550 0.8 Ratings Max 0.4 Max 20 Typ 1100 Max 0.5 Unit V A A Nm Unit V mA pF /W Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd S60HC3 500 Forward Voltage Pulse measurement per diode 200 100 [A] IF 50 Tc=125C [MAX] Tc=125C [TYP] Tc= 25C [MAX] Tc= 25C [TYP] Forward Current 20 10 5 2 1 0 0.5 1 1.5 2 Forward Voltage VF [V] S60HC3 10000 Reverse Current Pulse measurement per diode Tc=125C [TYP] 1000 Tc=100C [TYP] [mA] IR 100 Tc=75C [TYP] Reverse Current Tc=50C [TYP] 10 Tc=25C [TYP] 1 0.1 0 5 10 15 20 25 30 Reverse Voltage VR [V] S60HC3 40 Forward Power Dissipation DC [W] D=0.8 35 30 0.05 0.1 25 20 15 10 5 0 0.3 0.2 SIN 0.5 Forward Power Dissipation PF 0 20 40 60 80 100 Io [A] Average Rectified Forward Current Tj =125C 0 tp D=tp/T T IO S60HC3 Reverse Power Dissipation 140 [W] 120 PR DC D=0.05 0.1 0.2 0.3 100 Reverse Power Dissipation 80 60 0.5 40 SIN 0.8 20 0 0 5 10 15 20 25 30 35 Reverse Voltage VR [V] Tj =125C 0 VR tp D=tp/T T S60HC3 120 Derating Curve Io [A] Average Rectified Forward Current 100 DC D=0.8 80 0.5 60 SIN 0.3 40 0.2 0.1 20 0.05 0 0 20 40 60 80 100 120 140 Case Temperature Tc [C] VR = 15V IO 0 0 VR tp D=tp/T T S60HC3 800 Peak Surge Forward Capability IFSM 10ms 700 10ms 1 cycle IFSM [A] 600 non-repetitive, sine wave, Tj=25C before surge current is applied Peak Surge Forward Current 500 400 300 200 100 0 1 2 5 10 20 50 100 Number of Cycles [cycle] S60HC3 10000 Junction Capacitance f=1MHz Tc=25C TYP per diode Junction Capacitance Cj 1000 100 0.1 [pF] 0.2 0.5 1 2 5 10 30 Reverse Voltage VR [V] |
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